FQP2N40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP2N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 20 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.8 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de FQP2N40 MOSFET
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FQP2N40 datasheet
fqp2n40.pdf
October 2013 FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Description Features This N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta
fqp2n40.pdf
FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, Description ID = 0.9 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC) is produced using ON Semiconductor s proprietary Low Crss (Typ. 3.0 pF) planar stripe and DMOS technology. This advanced Fast Switching MOSFET technolog
fqp2n60.pdf
April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo
fqp2n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been
Otros transistores... FDS6679 , FCD620N60ZF , FDMS3660AS , FDMS86202 , FQPF2N80YDTU , FCP190N60GF102 , FDB42AN15F085 , FDPF7N50U , IRF2807 , FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 .
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