FQP2N40 PDF and Equivalents Search

 

FQP2N40 Specs and Replacement

Type Designator: FQP2N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm

Package: TO220

FQP2N40 substitution

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FQP2N40 datasheet

 ..1. Size:989K  fairchild semi
fqp2n40.pdf pdf_icon

FQP2N40

October 2013 FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Description Features This N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta... See More ⇒

 ..2. Size:1031K  onsemi
fqp2n40.pdf pdf_icon

FQP2N40

FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, Description ID = 0.9 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC) is produced using ON Semiconductor s proprietary Low Crss (Typ. 3.0 pF) planar stripe and DMOS technology. This advanced Fast Switching MOSFET technolog... See More ⇒

 9.1. Size:1331K  fairchild semi
fqp2n60.pdf pdf_icon

FQP2N40

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒

 9.2. Size:712K  fairchild semi
fqp2n50.pdf pdf_icon

FQP2N40

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been... See More ⇒

Detailed specifications: FDS6679 , FCD620N60ZF , FDMS3660AS , FDMS86202 , FQPF2N80YDTU , FCP190N60GF102 , FDB42AN15F085 , FDPF7N50U , IRF2807 , FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 .

History: FCH47N60FF085 | BUK545-100A | FDMC8032L

Keywords - FQP2N40 MOSFET specs

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