FDMC612PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC612PZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 53 nC
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 1215 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: MLP3.3X3.3
Búsqueda de reemplazo de MOSFET FDMC612PZ
FDMC612PZ Datasheet (PDF)
fdmc612pz.pdf
October 2013FDMC612PZP-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 mFeatures General Description Max rDS(on) = 8.4 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 13 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and High performan
fdmc610p.pdf
November 2013FDMC610P P-Channel PowerTrench MOSFET -12 V, -80 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = -4.5 V, ID = -22 A This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.4 m at VGS = -2.5 V, ID = -16 Aringing of DC/DC converters using either synchronous or Stat
fdmc6679az.pdf
July 2009FDMC6679AZP-Channel PowerTrench MOSFET -30 V, -20 A, 10 mFeatures General DescriptionThe FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 Aload switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 Apackage technologies have been combined to offer the lowest rD
fdmc6688p.pdf
February 2015FDMC6688PP-Channel PowerTrench MOSFET-20 V, -56 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =
fdmc6675bz.pdf
September 2010FDMC6675BZP-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 Apackage technologies have been combined to offer the lowest
fdmc6686p.pdf
February 2015FDMC6686PP-Channel PowerTrench MOSFET-20 V, -56 A, 4 mFeatures General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =11.5
fdmc6890nz.pdf
October 2006FDMC6890NZtmDual N-Channel PowerTrench MOSFET 20V, 4A, Q1:68m, Q2:100mFeatures General DescriptionQ1: N-ChannelFDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching Max rDS(on) = 68m at VGS = 4.5V, ID = 4Acharacteristics. Inside the Power 33 package features two Max rDS(on) = 100m at VGS = 2
fdmc6296.pdf
November 2010FDMC6296Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 mFeatures General Description Max rDS(on) = 10.5 m at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform Max rDS(on) = 15 m at VGS = 4.5 V, ID = 10 Awell in Point of Load converters. Providing an
fdmc6686p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918