FDMC612PZ - описание и поиск аналогов

October 2013 FDMC612PZ P-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 m Features General Description Max rDS(on) = 8.4 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 13 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and High performan

November 2013 FDMC610P P-Channel PowerTrench MOSFET -12 V, -80 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = -4.5 V, ID = -22 A This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.4 m at VGS = -2.5 V, ID = -16 A ringing of DC/DC converters using either synchronous or Stat

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rD

February 2015 FDMC6688P P-Channel PowerTrench MOSFET -20 V, -56 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

September 2010 FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 A package technologies have been combined to offer the lowest

February 2015 FDMC6686P P-Channel PowerTrench MOSFET -20 V, -56 A, 4 m Features General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

October 2006 FDMC6890NZ tm Dual N-Channel PowerTrench MOSFET 20V, 4A, Q1 68m , Q2 100m Features General Description Q1 N-Channel FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching Max rDS(on) = 68m at VGS = 4.5V, ID = 4A characteristics. Inside the Power 33 package features two Max rDS(on) = 100m at VGS = 2

November 2010 FDMC6296 Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 m Features General Description Max rDS(on) = 10.5 m at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform Max rDS(on) = 15 m at VGS = 4.5 V, ID = 10 A well in Point of Load converters. Providing an

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur