FDB20N50F MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDB20N50F datasheet

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December 2013 FDB20N50F N-Channel UniFETTM FRFET MOSFET 500 V, 20 A, 260 m Features Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 27

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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isc N-Channel Mosfet Transistor FDB20N50F FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Low ON Resistance R = 0.26 (Max) DS(on) Low leakage current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. A

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