Справочник MOSFET. FDB20N50F

 

FDB20N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB20N50F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FDB20N50F

 

 

FDB20N50F Datasheet (PDF)

 ..1. Size:562K  fairchild semi
 fdb20n50f.pdf

FDB20N50F FDB20N50F

December 2013FDB20N50F N-Channel UniFETTM FRFET MOSFET500 V, 20 A, 260 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 27

 ..2. Size:675K  onsemi
 fdb20n50f.pdf

FDB20N50F FDB20N50F

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:250K  inchange semiconductor
 fdb20n50f.pdf

FDB20N50F FDB20N50F

isc N-Channel Mosfet Transistor FDB20N50FFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.26(Max)DS(on)Low leakage current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

 9.1. Size:613K  fairchild semi
 fdb20an06a0 fdp20an06a0.pdf

FDB20N50F FDB20N50F

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

 9.2. Size:617K  fairchild semi
 fdb20an06a0 fdp20an06a0.pdf

FDB20N50F FDB20N50F

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

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