FDMC6686P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDMC6686P datasheet

..1. Size:253K fairchild semi
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February 2015 FDMC6686P P-Channel PowerTrench MOSFET -20 V, -56 A, 4 m Features General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

..2. Size:327K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:433K fairchild semi
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February 2015 FDMC6688P P-Channel PowerTrench MOSFET -20 V, -56 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

8.1. Size:299K fairchild semi
fdmc6679az.pdf pdf_icon

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rD