FDMC6686P - описание и поиск аналогов

February 2015 FDMC6686P P-Channel PowerTrench MOSFET -20 V, -56 A, 4 m Features General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

February 2015 FDMC6688P P-Channel PowerTrench MOSFET -20 V, -56 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rD

September 2010 FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 A package technologies have been combined to offer the lowest