FDMS86150A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDMS86150A datasheet

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December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

5.3. Size:316K fairchild semi
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January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p