Справочник MOSFET. FDMS86150A

 

FDMS86150A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMS86150A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 47 nC
   trⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 703 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00485 Ohm
   Тип корпуса: PQFN5X6

 Аналог (замена) для FDMS86150A

 

 

FDMS86150A Datasheet (PDF)

 ..1. Size:268K  fairchild semi
 fdms86150a.pdf

FDMS86150A FDMS86150A

December 2014FDMS86150AN-Channel Shielded Gate PowerTrench MOSFET100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

 5.1. Size:358K  1
 fdms86150et100.pdf

FDMS86150A FDMS86150A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.2. Size:298K  fairchild semi
 fdms86150.pdf

FDMS86150A FDMS86150A

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

 5.3. Size:316K  fairchild semi
 fdms86150et100.pdf

FDMS86150A FDMS86150A

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p

 5.4. Size:353K  onsemi
 fdms86150.pdf

FDMS86150A FDMS86150A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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