FDMD82100L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2014FDMD82100LDual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mFeatures General Description Max rDS(on) = 19.5 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 m at VGS = 4.5 V, ID = 5.7 Ainternally connected for half/full bridge, low source inductance

June 2014FDMD82100Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 m at VGS = 6 V, ID = 5.5 Ainternally connected for half/full bridge, low source inductance Ideal

October 2014FDMD8280Dual N-Channel Power Trench MOSFET 80 V, 40 A, 8.2 mFeatures General Description Max rDS(on) = 8.2 m at VGS = 10 V, ID = 11 AThis device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 m at VGS = 8 V, ID = 9.5 Ainternally connected for half/full bridge, low source inductance Ide

June 2015FDMD8900N-Channel PowerTrench MOSFETQ1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 mFeatures General DescriptionQ1: N-ChannelThis devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 m at VGS = 10 V, ID = 19 Adrain are internally connected providing a low source inductance Max rDS(on) =

March 2015FDMD85100Dual N-Channel PowerTrench MOSFETQ1: 100 V, 48A, 9.9 m Q2: 100 V, 48A, 9.9 mFeatures General DescriptionQ1: N-ChannelThis device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 Ainternally connected for half/full bridge, low source inductance Max rDS(on

January 2014FDMD84100Dual N-Channel PowerTrench MOSFET 100 V, 21 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 A This package integrates two N-Channel devices connected internally in common-source configuration. This enables very Max rDS(on) = 32 m at VGS = 6 V, ID = 5.5 Alow package parasitics and optimized thermal path to the Ideal fo

February 2015FDMD86100Dual N-Channel Shielded Gate PowerTrench MOSFET100 V, 39 A, 10.5 mFeatures General Description Common source configuration to eliminate PCB routingThis package integrates two N-Channel devices connected internally in common-source configuration and incorporates Large source pad on bottom of package for enhancedShielded Gate technology. This enables v

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET Dual, N-Channel,POWERTRENCH)Q1: 40 V, 156 A, 1.5 mWQ2: 40 V, 156 A, 1.5 mWFDMD8540Lwww.onsemi.comGeneral DescriptionThis device includes two 40 V N-Channel MOSFETs in a dualVDS rDS(ON) MAX ID MAXPower (5 mm x 6 mm) package. HS source and LS drain internallyconnected for half/full bridge, low source inductance package, low40 V 1.5 mW @ 10 V 156 ArDS(on)/Qg FOM