All MOSFET. FDMD82100L Datasheet

 

FDMD82100L Datasheet and Replacement


   Type Designator: FDMD82100L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 173 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: PQFN3.3X5
 

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FDMD82100L Datasheet (PDF)

 ..1. Size:335K  fairchild semi
fdmd82100l.pdf pdf_icon

FDMD82100L

June 2014FDMD82100LDual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mFeatures General Description Max rDS(on) = 19.5 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 m at VGS = 4.5 V, ID = 5.7 Ainternally connected for half/full bridge, low source inductance

 5.1. Size:274K  fairchild semi
fdmd82100.pdf pdf_icon

FDMD82100L

June 2014FDMD82100Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 m at VGS = 6 V, ID = 5.5 Ainternally connected for half/full bridge, low source inductance Ideal

 8.1. Size:538K  fairchild semi
fdmd8280.pdf pdf_icon

FDMD82100L

October 2014FDMD8280Dual N-Channel Power Trench MOSFET 80 V, 40 A, 8.2 mFeatures General Description Max rDS(on) = 8.2 m at VGS = 10 V, ID = 11 AThis device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 m at VGS = 8 V, ID = 9.5 Ainternally connected for half/full bridge, low source inductance Ide

 9.1. Size:500K  fairchild semi
fdmd8900.pdf pdf_icon

FDMD82100L

June 2015FDMD8900N-Channel PowerTrench MOSFETQ1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 mFeatures General DescriptionQ1: N-ChannelThis devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 m at VGS = 10 V, ID = 19 Adrain are internally connected providing a low source inductance Max rDS(on) =

Datasheet: FQB27N25TMF085 , FDBL9403F085 , FDBL9406F085 , FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , IRFP250N , FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 .

History: 3SK263

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