FCH077N65F Todos los transistores

 

FCH077N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCH077N65F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 481 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 54 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 126 nC

Resistencia drenaje-fuente RDS(on): 0.077 Ohm

Empaquetado / Estuche: TO247

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FCH077N65F Datasheet (PDF)

1.1. fch077n65f f085.pdf Size:695K _fairchild_semi

FCH077N65F
FCH077N65F

December 2014 FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mΩ D Features Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing

1.2. fch077n65f.pdf Size:1384K _fairchild_semi

FCH077N65F
FCH077N65F

December 2014 FCH077N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 54 A, 77 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 68 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 126 nC

 5.1. fch070n60e.pdf Size:1351K _upd-mosfet

FCH077N65F
FCH077N65F

April 2015 FCH070N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 52 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 58 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 128 nC

5.2. fch072n60f f085.pdf Size:633K _fairchild_semi

FCH077N65F
FCH077N65F

November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

 5.3. fch072n60.pdf Size:765K _fairchild_semi

FCH077N65F
FCH077N65F

August 2014 FCH072N60 N-Channel SuperFET® II MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 66 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 95 nC) and lower

5.4. fch072n60f.pdf Size:582K _fairchild_semi

FCH077N65F
FCH077N65F

December 2013 FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 65 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno

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