FCH077N65F. Аналоги и основные параметры
Наименование производителя: FCH077N65F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 481 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 54 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 165 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.077 Ohm
Тип корпуса: TO247
Аналог (замена) для FCH077N65F
- подборⓘ MOSFET транзистора по параметрам
FCH077N65F даташит
fch077n65f f085.pdf
December 2014 FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 m D Features Typical RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package drawing
fch077n65f.pdf
December 2014 FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 68 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 126 nC
fch077n65f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch077n65f-f085.pdf
MOSFET N-Channel, SUPERFET) II, FRFET) 650 V, 54 A, 77 mW FCH077N65F-F085 Description SuperFET II MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize VDS RDS(ON) MAX ID MAX condu
Другие MOSFET... FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , IRFP250N , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU .
History: FCPF1300N80Z
History: FCPF1300N80Z
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