FCH104N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCH104N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 63 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
   Paquete / Cubierta: TO247

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FCH104N60 Datasheet (PDF)

..1. Size:765K fairchild semi
fch104n60.pdf

June 2014FCH104N60N-Channel SuperFET II MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC)and lower

..2. Size:361K inchange semiconductor
fch104n60.pdf

isc N-Channel MOSFET Transistor FCH104N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 104m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

0.1. Size:629K fairchild semi
fch104n60f f085.pdf

November 2014FCH104N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 m DFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedr

0.2. Size:573K fairchild semi
fch104n60f.pdf

December 2013FCH104N60FN-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 98 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn

0.3. Size:998K onsemi
fch104n60f-f085.pdf

FCH104N60F-F085N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 mDFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101 RoHS Compliant GDTO-247SSDescription SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family tha

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