FCP104N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCP104N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
   Paquete / Cubierta: TO220

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FCP104N60 Datasheet (PDF)

..1. Size:797K fairchild semi
fcp104n60.pdf

June 2014FCP104N60N-Channel SuperFET II MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC)and lower

..2. Size:765K onsemi
fcp104n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:652K fairchild semi
fcp104n60f.pdf

December 2013FCP104N60FN-Channel SuperFET ll FRFET MOSFET600 V, 37 A, 104 mFeatures DescriptionSuperFET II MOSFET is Fairchild Semiconductors brand-new 650 V @ TJ = 150Chigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 91 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 110 nC

0.2. Size:227K inchange semiconductor
fcp104n60f.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP104N60FFEATURESStatic drain-source on-resistance:RDS(on) 104mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONLightingAC-DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

Otros transistores... FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , IRF1407 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z , FCP150N65F , FCPF1300N80Z .

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