FCP104N60 PDF and Equivalents Search

 

FCP104N60 Specs and Replacement

Type Designator: FCP104N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm

Package: TO220

FCP104N60 substitution

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FCP104N60 datasheet

 ..1. Size:797K  fairchild semi
fcp104n60.pdf pdf_icon

FCP104N60

June 2014 FCP104N60 N-Channel SuperFET II MOSFET 600 V, 37 A, 104 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC) and lower ... See More ⇒

 ..2. Size:765K  onsemi
fcp104n60.pdf pdf_icon

FCP104N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:652K  fairchild semi
fcp104n60f.pdf pdf_icon

FCP104N60

December 2013 FCP104N60F N-Channel SuperFET ll FRFET MOSFET 600 V, 37 A, 104 m Features Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new 650 V @ TJ = 150 C high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 91 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 110 nC... See More ⇒

 0.2. Size:227K  inchange semiconductor
fcp104n60f.pdf pdf_icon

FCP104N60

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP104N60F FEATURES Static drain-source on-resistance RDS(on) 104m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Lighting AC-DC Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dra... See More ⇒

Detailed specifications: FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , 2SK3878 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z , FCP150N65F , FCPF1300N80Z .

History: FQB46N15 | FCH130N60

Keywords - FCP104N60 MOSFET specs

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