FDPF51N25RDTU Todos los transistores

 

FDPF51N25RDTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF51N25RDTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 38 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO220F

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FDPF51N25RDTU Datasheet (PDF)

1.1. fdpf51n25rdtu.pdf Size:650K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

August 2014 FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features Description • RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 6

1.2. fdp51n25 fdpf51n25.pdf Size:2977K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has been especiall

 5.1. fdpf52n20t.pdf Size:1179K _upd-mosfet

FDPF51N25RDTU
FDPF51N25RDTU

October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 49nC) DMOS technology. • Low Crss ( Typ. 66pF) This advance technology h

5.2. fdp5n50nzf fdpf5n50nzf.pdf Size:256K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

February 2010 ?TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET? 500V, 4.2A, 1.75? Features Description RDS(on) = 1.57? ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has be

 5.3. fdp5n50 fdpf5n50.pdf Size:265K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially

5.4. fdp5n50f fdpf5n50ft.pdf Size:427K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has be

 5.5. fdp55n06 fdpf55n06.pdf Size:1209K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

TM UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features Description 55A, 60V, RDS(on) = 0.022 ? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switchi

5.6. fdp5n50nzu fdpf5n50nzu.pdf Size:702K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

February 2010 ?TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET? 500V, 3.9A, 2.0? Features Description RDS(on) = 1.7? ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has bee

5.7. fdp5n50u fdpf5n50ut.pdf Size:224K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been

5.8. fdp52n20 fdpf52n20t.pdf Size:1196K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049? Features Description RDS(on) = 0.041? ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology has been especia

5.9. fdp5n50nz fdpf5n50nz.pdf Size:247K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5? Features Description RDS(on) = 1.38? (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has been especially

5.10. fdpf5n50t.pdf Size:580K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

November 2013 FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 5 pF) provi

5.11. fdp5n60nz fdpf5n60nz.pdf Size:265K _fairchild_semi

FDPF51N25RDTU
FDPF51N25RDTU

November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET? 600V, 4.5A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been esp

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