FDPF51N25RDTU - описание и поиск аналогов

August 2014 FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m Features Description RDS(on) = 48 m (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 6

July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FDPF51N25 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT