FCPF380N65FL1 Todos los transistores

 

FCPF380N65FL1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF380N65FL1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.8 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO220F

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FCPF380N65FL1 datasheet

 ..1. Size:753K  fairchild semi
fcpf380n65fl1.pdf pdf_icon

FCPF380N65FL1

September 2014 FCPF380N65FL1 N-Channel SuperFET II FRFET MOSFET 650 V, 10.2 A, 380 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 320 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 ..2. Size:201K  inchange semiconductor
fcpf380n65fl1.pdf pdf_icon

FCPF380N65FL1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF380N65FL1 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2

 5.1. Size:624K  fairchild semi
fcp380n60e fcpf380n60e.pdf pdf_icon

FCPF380N65FL1

November 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 5.2. Size:637K  fairchild semi
fcp380n60 fcpf380n60.pdf pdf_icon

FCPF380N65FL1

November 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

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