HUF76107D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUF76107D3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: TO251AA

Búsqueda de reemplazo de MOSFET HUF76107D3

HUF76107D3 Datasheet (PDF)

0.1. Size:112K intersil
huf76107d3-s.pdf

HUF76107D3, HUF76107D3SData Sheet July 1999 File Number 4701.120A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE

6.1. Size:367K intersil
huf76107p3.pdf

HUF76107P3Data Sheet October 1999 File Number 4382.520A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE Modela

7.1. Size:134K intersil
huf76105sk8.pdf

HUF76105SK8Data Sheet May 1999 File Number 4719.15.5A, 30V, 0.050 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5.5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Simulation Modelslowest possible

7.2. Size:174K intersil
huf76105dk8.pdf

HUF76105DK8TMData Sheet June 2000 File Number 4380.65A, 30V, 0.050 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Temperature Compensating

Otros transistores... HUF75639G3 , HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , 5N50 , HUF76107D3S , HUF76107P3 , HUF76113DK8 , HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 .

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