HUF76107D3 Todos los transistores

 

HUF76107D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF76107D3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: TO251AA
 

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HUF76107D3 Datasheet (PDF)

 0.1. Size:112K  intersil
 huf76107d3-s.pdf pdf_icon

HUF76107D3

HUF76107D3, HUF76107D3SData Sheet July 1999 File Number 4701.120A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE

 6.1. Size:367K  intersil
 huf76107p3.pdf pdf_icon

HUF76107D3

HUF76107P3Data Sheet October 1999 File Number 4382.520A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE Modela

 7.1. Size:134K  intersil
 huf76105sk8.pdf pdf_icon

HUF76107D3

HUF76105SK8Data Sheet May 1999 File Number 4719.15.5A, 30V, 0.050 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5.5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Simulation Modelslowest possible

 7.2. Size:174K  intersil
 huf76105dk8.pdf pdf_icon

HUF76107D3

HUF76105DK8TMData Sheet June 2000 File Number 4380.65A, 30V, 0.050 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Temperature Compensating

MOSTRAR MÁS

Otros transistores... HUF75639G3 , HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , AO4468 , HUF76107D3S , HUF76107P3 , HUF76113DK8 , HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 .

History: BLF6G20-180PN | SSW4N60A | APT40M42JN | HUF75645S3S | 2N6758JANTXV

 

 
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