HUF76107D3 Datasheet. Specs and Replacement

Type Designator: HUF76107D3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO251AA

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HUF76107D3 datasheet

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HUF76107D3

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HUF76107D3

HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power 20A, 30V MOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052 the innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model a... See More ⇒

 7.1. Size:134K  intersil
 huf76105sk8.pdf pdf_icon

HUF76107D3

HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Simulation Models lowest possible... See More ⇒

 7.2. Size:174K  intersil
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HUF76107D3

HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Temperature Compensating... See More ⇒

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Detailed specifications: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75645P3, HUF75645S3S, HUF75652G3, HUF76105DK8, HUF76105SK8, 60N06, HUF76107D3S, HUF76107P3, HUF76113DK8, HUF76113SK8, HUF76113T3ST, HUF76121D3, HUF76121D3S, HUF76121P3

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