FDBL0630N150 Todos los transistores

 

FDBL0630N150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDBL0630N150
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 169 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 536 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
   Paquete / Cubierta: H-PSOF
     - Selección de transistores por parámetros

 

FDBL0630N150 Datasheet (PDF)

 ..1. Size:494K  fairchild semi
fdbl0630n150.pdf pdf_icon

FDBL0630N150

November 2014FDBL0630N150N-Channel Power Trench MOSFET150V, 169A, 6.3m Features Typ rDS(on) = 5m at VGS = 10V, ID = 80A Typ Qg(tot) = 70nC at VGS = 10V, ID = 80AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackagedrawing,ple

 ..2. Size:580K  onsemi
fdbl0630n150.pdf pdf_icon

FDBL0630N150

FDBL0630N150MOSFET N-Channel,POWERTRENCH)150 V, 169 A, 6.3 mW www.onsemi.cn rDS(on) = 5 mW ( VGS = 10 V ID = 80 A) Typ Qg(tot) = 70 nC VGS = 10 V ID = 80 AVDSS rDS(ON) MAX ID MAX UIS 150 V 6.3 mW @ 10 V 169 A This Device is Pb-Free and is RoHS Compliant D G S MOSFET

 9.1. Size:488K  fairchild semi
fdbl0120n40.pdf pdf_icon

FDBL0630N150

November 2014FDBL0120N40N-Channel PowerTrench MOSFET40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackage

 9.2. Size:379K  fairchild semi
fdbl0210n80.pdf pdf_icon

FDBL0630N150

April 2015FDBL0210N80N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automations Battery Operated toolsS Battery ProtectionForcurrentpackaged

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TK15X60U | AM90N06-10P | AOD474B | IRF7306Q | NTB75N03-006 | AP4506GEM | SE3080A

 

 
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