2SJ648 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ648
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 15 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.45 Ohm
Paquete / Cubierta: SC75 USM
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2SJ648 Datasheet (PDF)
2sj648.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ648P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SJ648 is a switching device which can be driven directly+0.10.3 0by a 2.5 V power source.0.1+0.10.05 The 2SJ648 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications suchas
2sj646.pdf

Ordering number : ENN8282 2SJ646P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ646ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --8 ADr
2sj649.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj647.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... FDBL0120N40 , FDBL0630N150 , FDMD8280 , FCU850N80Z , FDMS5361LF085 , FCD850N80Z , 2SK3503 , 2SK3255 , 75N75 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , SPD35N10 , SPI70N10L .
History: SM3320NSQG | SIHP33N60EF
History: SM3320NSQG | SIHP33N60EF



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