2SJ648 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ648

Código: H1

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 0.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 39 nS

Conductancia de drenaje-sustrato (Cd): 15 pF

Resistencia drenaje-fuente RDS(on): 1.45 Ohm

Empaquetado / Estuche: SC75_USM

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2SJ648 Datasheet (PDF)

1.1. 2sj648.pdf Size:63K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SJ648 is a switching device which can be driven directly +0.1 0.3 –0 by a 2.5 V power source. 0.1+0.1 –0.05 The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as

5.1. 2sj646.pdf Size:35K _sanyo

Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ646 Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --8 A Dr

5.2. 2sj647.pdf Size:190K _nec

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.3. 2sj649.pdf Size:202K _nec