2SJ648 PDF and Equivalents Search

 

2SJ648 Specs and Replacement

Type Designator: 2SJ648

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: SC75 USM

2SJ648 substitution

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2SJ648 datasheet

 ..1. Size:63K  nec
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2SJ648

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ648 is a switching device which can be driven directly +0.1 0.3 0 by a 2.5 V power source. 0.1+0.1 0.05 The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as... See More ⇒

 9.1. Size:35K  sanyo
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2SJ648

Ordering number ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ646 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --8 A Dr... See More ⇒

 9.2. Size:202K  nec
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2SJ648

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.3. Size:190K  nec
2sj647.pdf pdf_icon

2SJ648

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FDBL0120N40 , FDBL0630N150 , FDMD8280 , FCU850N80Z , FDMS5361LF085 , FCD850N80Z , 2SK3503 , 2SK3255 , 18N50 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , SPD35N10 , SPI70N10L .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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