IRLB4132PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLB4132PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 78 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 92 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO220AB
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IRLB4132PBF datasheet
irlb4132pbf.pdf
Approved (Not Released) PD - TBD IRLB4132PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l Low Voltage Power Tools 30V 3.5m 36nC Benefits D l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at 4.5V VGS S D l Ultra-Low Gate Impedance G l Fully Characterized Avalanche Voltage TO-220AB and Curr
irlb4132.pdf
Approved (Not Released) PD - TBD IRLB4132PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l Low Voltage Power Tools 30V 3.5m 36nC Benefits D l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at 4.5V VGS S D l Ultra-Low Gate Impedance G l Fully Characterized Avalanche Voltage TO-220AB and Curr
irlb4132.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB4132 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Low voltage power tools ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
irlb4030pbf.pdf
PD - 97369 IRLB4030PbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 3.4m l Hard Switched and High Frequency Circuits G max. 4.3m ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superio
Otros transistores... SST201 , SST202 , SST203 , SST204 , JCS12N60CT , JCS12N60FT , SI2301DS , ULB4132 , MMIS60R580P , 2SK240 , 2SJ75 , 2SK146 , 2SJ73 , 2SK266 , 2SK455 , 2SK456 , 2SK147 .
History: SI2301DS
History: SI2301DS
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