Справочник MOSFET. IRLB4132PBF

 

IRLB4132PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLB4132PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 92 ns
   Cossⓘ - Выходная емкость: 960 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRLB4132PBF

 

 

IRLB4132PBF Datasheet (PDF)

 ..1. Size:246K  infineon
 irlb4132pbf.pdf

IRLB4132PBF IRLB4132PBF

Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr

 6.1. Size:242K  international rectifier
 irlb4132.pdf

IRLB4132PBF IRLB4132PBF

Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr

 6.2. Size:206K  inchange semiconductor
 irlb4132.pdf

IRLB4132PBF IRLB4132PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB4132FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLow voltage power toolsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.1. Size:280K  international rectifier
 irlb4030pbf.pdf

IRLB4132PBF IRLB4132PBF

PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio

 9.2. Size:280K  infineon
 irlb4030pbf.pdf

IRLB4132PBF IRLB4132PBF

PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio

 9.3. Size:245K  inchange semiconductor
 irlb4030.pdf

IRLB4132PBF IRLB4132PBF

isc N-Channel MOSFET Transistor IRLB4030IIRLB4030FEATURESStatic drain-source on-resistance:RDS(on) 4.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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