STP16NE06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP16NE06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO220

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STP16NE06 Datasheet (PDF)

..1. Size:337K st
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STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

..2. Size:336K st
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STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

..3. Size:346K st
stp16ne06 stp16ne06fp.pdf pdf_icon

STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

0.1. Size:188K st
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STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V

0.2. Size:182K st
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STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V

8.1. Size:1053K st
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

8.2. Size:1099K st
stf16n65m5 sti16n65m5 stp16n65m5 stu16n65m5 stw16n65m5.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFETin TO-220FP, IPAK, TO-220, IPAK, TO-247FeaturesTABTABVDSS @ RDS(on) Type IDTJmax max32 3 3211 2STF16N65M51TO-220FPTO-220STI16N65M5 IPAKSTP16N65M5 710 V

8.3. Size:294K st
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STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

8.4. Size:577K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf pdf_icon

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

8.5. Size:337K st
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STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

8.6. Size:1255K st
std16n50m2 stf16n50m2 stp16n50m2.pdf pdf_icon

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

8.7. Size:466K st
std16nf25 stf16nf25 stp16nf25.pdf pdf_icon

STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V

8.8. Size:54K st
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STP16NB25STP16NB25FP N - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NB25 250 V

8.9. Size:50K st
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STP16N10LN - CHANNEL 100V - 0.14 - 16A - TO-220 POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP16N10L 100 V

8.10. Size:317K st
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STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

8.11. Size:344K st
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STP16NB25STP16NB25FPN - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP16NB25 250 V

8.12. Size:274K st
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STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

8.13. Size:439K st
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STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

8.14. Size:367K st
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STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06 60 V

8.15. Size:231K st
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STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V

8.16. Size:574K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf pdf_icon

8.17. Size:330K st
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STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V

8.18. Size:259K st
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STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

8.19. Size:338K st
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STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

8.20. Size:818K st
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STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested

8.21. Size:745K st
stf16nk60z stp16nk60z stw16nk60z.pdf pdf_icon

STF16NK60ZSTP16NK60Z, STW16NK60ZN-channel 600 V, 038 , 14 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF16NK60Z 600 V

8.22. Size:323K st
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STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

8.23. Size:274K st
stp16nf06l stp16nf06lfp.pdf pdf_icon

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

8.24. Size:994K st
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

8.25. Size:229K inchange semiconductor
stp16nf06 istp16nf06.pdf pdf_icon

N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical

8.26. Size:206K inchange semiconductor
stp16nf06.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP16NF06FEATURESTypical R (on)=0.08DSWith low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... 2SK3599-01MR , 2SK1506 , 2SK3538 , 2SK3699-01MR , 2SK2171 , 2N5640 , FTP08N50 , FTA08N50 , 75N75 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E , DMZ6012E , FTE08N06G , FTE11N06G .