STP16NE06 Todos los transistores

 

STP16NE06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP16NE06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO220

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STP16NE06 Datasheet (PDF)

1.1. stp16ne06.pdf Size:337K _st

STP16NE06
STP16NE06

STP16NE06 STP16NE06FP ® N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP16NE06 60 V < 0.100 Ω 16 A STP16NE06FP 60 V < 0.100 Ω 11 A TYPICAL R = 0.08 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARA

1.2. stp16ne06 stp16ne06fp 2.pdf Size:336K _st

STP16NE06
STP16NE06

STP16NE06 STP16NE06FP ® N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP16NE06 60 V < 0.100 Ω 16 A STP16NE06FP 60 V < 0.100 Ω 11 A TYPICAL R = 0.08 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARA

 1.3. stp16ne06 stp16ne06fp.pdf Size:346K _st

STP16NE06
STP16NE06

STP16NE06 STP16NE06FP ® N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP16NE06 60 V < 0.100 Ω 16 A STP16NE06FP 60 V < 0.100 Ω 11 A TYPICAL R = 0.08 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARA

1.4. stp16ne06l.pdf Size:182K _st

STP16NE06
STP16NE06

STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V R I DSS DS(on) D STP16NE06L 60 V < 0.12 Ω 16 A STP16NE06LFP 60 V < 0.12 Ω 11 A TYPICAL R = 0.09 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION

 1.5. stp16ne06l stp16ne06lfp.pdf Size:188K _st

STP16NE06
STP16NE06

STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V R I DSS DS(on) D STP16NE06L 60 V < 0.12 Ω 16 A STP16NE06LFP 60 V < 0.12 Ω 11 A TYPICAL R = 0.09 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION

Otros transistores... 2SK3599-01MR , 2SK1506 , 2SK3538 , 2SK3699-01MR , 2SK2171 , 2N5640 , FTP08N50 , FTA08N50 , 2SK2545 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E , DMZ6012E , FTE08N06G , FTE11N06G .

 

 
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