HUF76129P3 Todos los transistores

 

HUF76129P3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF76129P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220AB
 

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HUF76129P3 datasheet

 0.1. Size:118K  intersil
 huf76129p3-s3s.pdf pdf_icon

HUF76129P3

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS

 6.1. Size:116K  intersil
 huf76129d3-s.pdf pdf_icon

HUF76129P3

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS

 7.1. Size:160K  fairchild semi
 huf76121d3.pdf pdf_icon

HUF76129P3

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac

 7.2. Size:134K  intersil
 huf76121sk8.pdf pdf_icon

HUF76129P3

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models

MOSTRAR MÁS

Otros transistores... HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , IRFZ44 , HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 .

 

 

 


 
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