HUF76129P3 Datasheet. Specs and Replacement

Type Designator: HUF76129P3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220AB

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HUF76129P3 substitution

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HUF76129P3 datasheet

 0.1. Size:118K  intersil
 huf76129p3-s3s.pdf pdf_icon

HUF76129P3

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 6.1. Size:116K  intersil
 huf76129d3-s.pdf pdf_icon

HUF76129P3

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 7.1. Size:160K  fairchild semi
 huf76121d3.pdf pdf_icon

HUF76129P3

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac... See More ⇒

 7.2. Size:134K  intersil
 huf76121sk8.pdf pdf_icon

HUF76129P3

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models ... See More ⇒

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Detailed specifications: HUF76113T3ST, HUF76121D3, HUF76121D3S, HUF76121P3, HUF76121S3S, HUF76121SK8, HUF76129D3, HUF76129D3S, IRFZ44, HUF76129S3S, HUF76131SK8, HUF76132P3, HUF76132S3S, HUF76132SK8, HUF76137P3, HUF76137S3S, HUF76139P3

Keywords - HUF76129P3 MOSFET specs

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