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SSS7N60B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSS7N60B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO220F

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SSS7N60B datasheet

 ..1. Size:921K  fairchild semi
ssp7n60b sss7n60b.pdf pdf_icon

SSS7N60B

SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi

 ..2. Size:201K  inchange semiconductor
sss7n60b.pdf pdf_icon

SSS7N60B

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SSS7N60B FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.1. Size:504K  samsung
sss7n60a.pdf pdf_icon

SSS7N60B

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 7.2. Size:779K  shenzhen
sss7n60.pdf pdf_icon

SSS7N60B

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts 600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara

Otros transistores... FTU04N60B , FTD04N60B , FTU04N65C , FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 , SSP7N60B , AO4468 , SSM40N03P , IRF830B , IRFS830B , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 .

 

 

 


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