SSS7N60B Datasheet. Specs and Replacement
Type Designator: SSS7N60B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
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SSS7N60B substitution
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SSS7N60B datasheet
ssp7n60b sss7n60b.pdf
SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒
sss7n60b.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SSS7N60B FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
sss7n60a.pdf
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
sss7n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts 600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara... See More ⇒
Detailed specifications: FTU04N60B, FTD04N60B, FTU04N65C, FTD04N65C, FTU06N70C, FTD06N70C, 2SK1487, SSP7N60B, 2SK2842, SSM40N03P, IRF830B, IRFS830B, CLY2, 2SK2369, 2SK2370, 2SK2357, 2SK2358
Keywords - SSS7N60B MOSFET specs
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History: HGB049N10S | NTR4503NT1
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