HUF76129S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUF76129S3S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO263AB

Búsqueda de reemplazo de MOSFET HUF76129S3S

HUF76129S3S Datasheet (PDF)

6.1. Size:118K intersil
huf76129p3-s3s.pdf

HUF76129P3, HUF76129S3SData Sheet September 1999 File Number 4395.656A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 56A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

6.2. Size:116K intersil
huf76129d3-s.pdf

HUF76129D3, HUF76129D3SData Sheet September 1999 File Number 4394.520A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

7.1. Size:160K fairchild semi
huf76121d3.pdf

HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac

7.2. Size:134K intersil
huf76121sk8.pdf

HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models

7.3. Size:114K intersil
huf76121p3-s3s.pdf

HUF76121P3, HUF76121S3SData Sheet September 1999 File Number 4392.847A, 30V, 0.021 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021innovative UltraFET process.This advanced process technology Temperature Compensating PS

Otros transistores... HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , HUF76129P3 , IRF640 , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S .

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