HUF76129S3S MOSFET Datasheet: N-Ch, 30V, 56A. Full specification with pinout and replacement list

HUF76129S3S Specs and Replacement

Type Designator: HUF76129S3S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO263AB

HUF76129S3S substitution

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HUF76129S3S datasheet

6.1. Size:118K intersil
huf76129p3-s3s.pdf pdf_icon

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

6.2. Size:116K intersil
huf76129d3-s.pdf pdf_icon

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

7.1. Size:160K fairchild semi
huf76121d3.pdf pdf_icon

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac... See More ⇒

7.2. Size:134K intersil
huf76121sk8.pdf pdf_icon

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models ... See More ⇒