CLY2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CLY2
   Código: Y2
   Tipo de FET: MESFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 9 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: MW6

Búsqueda de reemplazo de MOSFET CLY2

CLY2 Datasheet (PDF)

..1. Size:51K siemens
cly2.pdf

GaAs FET CLY 2________________________________________________________________________________________________________D a t a s h e e t4* Power amplifier for mobile phones5* For frequencies up to 3 GHz 6* Operating voltage range: 2 to 6 V* POUT at VD=3V, f=1.8GHz typ. 23.5 dBm* High efficiency better 55 %321ESD: Electrostatic discharge sensitive device,observe handli

..2. Size:103K triquint
cly2.pdf

CLY2DatasheetHigh-Power Packaged GaAs FET Description Applications Power Amplifiers for The CLY2 is a high-breakdown voltage GaAsWLAN transceivers FET designed for PA driver applications in the400 MHz to 3 GHz frequency range. It is ideal Driver Amplifiers for for portable PA applications in mobile phonesWLAN or mobile and portable WLAN transceivers due to itsp

0.1. Size:39K siemens
cly29.pdf

CLY29HiRel C-Band GaAs Power-MESFET HiRel Discrete and MicrowaveSemiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance forhigh voltage application Power added efficiency > 55 % Space Qualification Expected 1998ESA/SCC Detail Spec. No.: 5614/006,Type Vari

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