CLY2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CLY2
Tipo de FET: MESFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 9 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: MW6
Búsqueda de reemplazo de CLY2 MOSFET
CLY2 Datasheet (PDF)
cly2.pdf

GaAs FET CLY 2________________________________________________________________________________________________________D a t a s h e e t4* Power amplifier for mobile phones5* For frequencies up to 3 GHz 6* Operating voltage range: 2 to 6 V* POUT at VD=3V, f=1.8GHz typ. 23.5 dBm* High efficiency better 55 %321ESD: Electrostatic discharge sensitive device,observe handli
cly2.pdf

CLY2DatasheetHigh-Power Packaged GaAs FET Description Applications Power Amplifiers for The CLY2 is a high-breakdown voltage GaAsWLAN transceivers FET designed for PA driver applications in the400 MHz to 3 GHz frequency range. It is ideal Driver Amplifiers for for portable PA applications in mobile phonesWLAN or mobile and portable WLAN transceivers due to itsp
cly29.pdf

CLY29HiRel C-Band GaAs Power-MESFET HiRel Discrete and MicrowaveSemiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance forhigh voltage application Power added efficiency > 55 % Space Qualification Expected 1998ESA/SCC Detail Spec. No.: 5614/006,Type Vari
Otros transistores... FTU06N70C , FTD06N70C , 2SK1487 , SSP7N60B , SSS7N60B , SSM40N03P , IRF830B , IRFS830B , IRF740 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , J309G , J310G .
History: BLV730 | IRFL1006PBF | MMP60R290PTH | SJMN60R38F | KIA2906A-247 | WML10N65D1B | PFP12N65
History: BLV730 | IRFL1006PBF | MMP60R290PTH | SJMN60R38F | KIA2906A-247 | WML10N65D1B | PFP12N65



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