CLY2 MESFET Datasheet: N-Ch, 9V, 0.6A. Full specification with pinout and replacement list

CLY2 Specs and Replacement

Type Designator: CLY2

Type of Transistor: MESFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 9 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Package: MW6

CLY2 substitution

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CLY2 datasheet

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GaAs FET CLY 2 ________________________________________________________________________________________________________ D a t a s h e e t 4 * Power amplifier for mobile phones 5 * For frequencies up to 3 GHz 6 * Operating voltage range 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 3 2 1 ESD Electrostatic discharge sensitive device, observe handli... See More ⇒

..2. Size:103K triquint
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CLY2 Datasheet High-Power Packaged GaAs FET Description Applications Power Amplifiers for The CLY2 is a high-breakdown voltage GaAs WLAN transceivers FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal Driver Amplifiers for for portable PA applications in mobile phones WLAN or mobile and portable WLAN transceivers due to its p... See More ⇒

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CLY29 HiRel C-Band GaAs Power-MESFET HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No. 5614/006, Type Vari... See More ⇒

Detailed specifications: FTU06N70C, FTD06N70C, 2SK1487, SSP7N60B, SSS7N60B, SSM40N03P, IRF830B, IRFS830B, IRF740, 2SK2369, 2SK2370, 2SK2357, 2SK2358, AOD436, BSN304, J309G, J310G