CLY2
MOSFET. Datasheet pdf. Equivalent
Type Designator: CLY2
Marking Code: Y2
Type of Transistor: MESFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 9
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 0.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Package: MW6
CLY2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CLY2
Datasheet (PDF)
..1. Size:51K siemens
cly2.pdf
GaAs FET CLY 2________________________________________________________________________________________________________D a t a s h e e t4* Power amplifier for mobile phones5* For frequencies up to 3 GHz 6* Operating voltage range: 2 to 6 V* POUT at VD=3V, f=1.8GHz typ. 23.5 dBm* High efficiency better 55 %321ESD: Electrostatic discharge sensitive device,observe handli
..2. Size:103K triquint
cly2.pdf
CLY2DatasheetHigh-Power Packaged GaAs FET Description Applications Power Amplifiers for The CLY2 is a high-breakdown voltage GaAsWLAN transceivers FET designed for PA driver applications in the400 MHz to 3 GHz frequency range. It is ideal Driver Amplifiers for for portable PA applications in mobile phonesWLAN or mobile and portable WLAN transceivers due to itsp
0.1. Size:39K siemens
cly29.pdf
CLY29HiRel C-Band GaAs Power-MESFET HiRel Discrete and MicrowaveSemiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance forhigh voltage application Power added efficiency > 55 % Space Qualification Expected 1998ESA/SCC Detail Spec. No.: 5614/006,Type Vari
Datasheet: WPB4002
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