2SK2369 Todos los transistores

 

2SK2369 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2369

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO3P

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2SK2369 datasheet

 ..1. Size:86K  nec
2sk2369 2sk2370.pdf pdf_icon

2SK2369

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 3.0 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 Low On-Resistance 2SK2369 RDS(on) = 0.35 (VGS = 10 V, ID = 1

 8.1. Size:90K  nec
2sk2359 2sk2360.pdf pdf_icon

2SK2369

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 1.3 0.2 10.0 FEATURES Low On-Resistance 4 2SK2359 RDS(o

 8.2. Size:99K  nec
2sk2367 2sk2368.pdf pdf_icon

2SK2369

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 Low On-Resistance 2SK2367 RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)

 8.3. Size:85K  nec
2sk2361 2sk2362.pdf pdf_icon

2SK2369

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 2SK2361 RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A)

Otros transistores... FTD06N70C , 2SK1487 , SSP7N60B , SSS7N60B , SSM40N03P , IRF830B , IRFS830B , CLY2 , IRF840 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , J309G , J310G , SSF5508 .

 

 

 


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