HUF76407D3 Todos los transistores

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedanc

HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance - rDS(ON) = 0.090 , VGS = 10V BRANDING DASH - rDS(ON) = 0.105 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance