HUF76407D3 Todos los transistores

 

HUF76407D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF76407D3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.107 Ohm
   Paquete / Cubierta: TO251AA

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HUF76407D3 Datasheet (PDF)

 ..1. Size:234K  fairchild semi
huf76407d3 huf76407d3s.pdf

HUF76407D3
HUF76407D3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 0.1. Size:149K  fairchild semi
huf76407d3st.pdf

HUF76407D3
HUF76407D3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 0.2. Size:792K  onsemi
huf76407d3s.pdf

HUF76407D3
HUF76407D3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:266K  fairchild semi
huf76407dk8.pdf

HUF76407D3
HUF76407D3

HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc

 5.2. Size:542K  fairchild semi
huf76407dk f085.pdf

HUF76407D3
HUF76407D3

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

Otros transistores... HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S , HUF76143P3 , HUF76143S3S , HUF76145P3 , HUF76145S3S , 2SK3878 , HUF76407D3S , HUF76407DK8 , HUF76407P3 , HUF76409D3 , HUF76409D3S , HUF76409P3 , HUF76413D3 , HUF76413D3S .

 

 
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