Справочник MOSFET. HUF76407D3

 

HUF76407D3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HUF76407D3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11.3 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.107 Ohm
   Тип корпуса: TO251AA

 Аналог (замена) для HUF76407D3

 

 

HUF76407D3 Datasheet (PDF)

 ..1. Size:234K  fairchild semi
 huf76407d3 huf76407d3s.pdf

HUF76407D3 HUF76407D3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 0.1. Size:149K  fairchild semi
 huf76407d3st.pdf

HUF76407D3 HUF76407D3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 0.2. Size:792K  onsemi
 huf76407d3s.pdf

HUF76407D3 HUF76407D3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:266K  fairchild semi
 huf76407dk8.pdf

HUF76407D3 HUF76407D3

HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc

 5.2. Size:542K  fairchild semi
 huf76407dk f085.pdf

HUF76407D3 HUF76407D3

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

Другие MOSFET... HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S , HUF76143P3 , HUF76143S3S , HUF76145P3 , HUF76145S3S , 2SK3878 , HUF76407D3S , HUF76407DK8 , HUF76407P3 , HUF76409D3 , HUF76409D3S , HUF76409P3 , HUF76413D3 , HUF76413D3S .

 

 
Back to Top