IRFB830 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB830  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO263

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IRFB830 datasheet

 ..1. Size:761K  blue-rocket-elect
 irfb830.pdf pdf_icon

IRFB830

IRFB830(BRCS830B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 9.1. Size:254K  international rectifier
 irfb812pbf.pdf pdf_icon

IRFB830

PD -97693 IRFB812PbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications 500V 1.75 75ns 3.6A Features and Benefits Fast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga

 9.2. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

IRFB830

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 9.3. Size:222K  international rectifier
 auirfb8405.pdf pdf_icon

IRFB830

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S

MOSTRAR MÁS

Otros transistores... BRL2N60, BRM501D, BRP50N20, BRS1N60, BRS1N70, BRS1N80, BRS3N25, BRU20N50, 12N60, IRFH3205, SI2306, VTI630, VTI630F, VTI634F, VTI640, VTI640F, SSP2N60B