IRFB830 Todos los transistores

 

IRFB830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB830
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO263
 

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IRFB830 Datasheet (PDF)

 ..1. Size:761K  blue-rocket-elect
 irfb830.pdf pdf_icon

IRFB830

IRFB830(BRCS830B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 9.1. Size:254K  international rectifier
 irfb812pbf.pdf pdf_icon

IRFB830

PD -97693IRFB812PbFHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications500V 1.75 75ns 3.6AFeatures and Benefits Fast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga

 9.2. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

IRFB830

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 9.3. Size:222K  international rectifier
 auirfb8405.pdf pdf_icon

IRFB830

AUTOMOTIVE GRADEAUIRFB8405FeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant GID (Silicon Limited) 185A Automotive Qualified *ID (Package Limited) 120A S

MOSTRAR MÁS

Otros transistores... BRL2N60 , BRM501D , BRP50N20 , BRS1N60 , BRS1N70 , BRS1N80 , BRS3N25 , BRU20N50 , 4N60 , IRFH3205 , SI2306 , VTI630 , VTI630F , VTI634F , VTI640 , VTI640F , SSP2N60B .

History: IRFAE50 | SIS862DN | RU5H18Q | FDB86563F085 | IRFR2407 | JSM3622

 

 
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