IRFB830 MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

IRFB830 Specs and Replacement

Type Designator: IRFB830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO263

IRFB830 substitution

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IRFB830 datasheet

..1. Size:761K blue-rocket-elect
irfb830.pdf pdf_icon

IRFB830(BRCS830B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ... See More ⇒

9.1. Size:254K international rectifier
irfb812pbf.pdf pdf_icon

PD -97693 IRFB812PbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications 500V 1.75 75ns 3.6A Features and Benefits Fast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga... See More ⇒

9.2. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li... See More ⇒

9.3. Size:222K international rectifier
auirfb8405.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S ... See More ⇒