SSP2N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSP2N60B Datasheet (PDF)

..1. Size:862K fairchild semi
ssp2n60b sss2n60b.pdf pdf_icon

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

7.1. Size:939K samsung
ssp2n60a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.1. Size:931K samsung
ssp2n80a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un

9.2. Size:934K samsung
ssp2n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Otros transistores... IRFB830 , IRFH3205 , SI2306 , VTI630 , VTI630F , VTI634F , VTI640 , VTI640F , IRFP250 , SSS2N60B , 2SK4100LS , 2SK1460 , 2SK2010 , 2SK1033 , 2SK1035 , 2SK1036 , 2SK1052 .