2SK2010 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2010
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: TO220ML
Búsqueda de reemplazo de 2SK2010 MOSFET
2SK2010 Datasheet (PDF)
2sk2010.pdf

Ordering number:ENN4319N-Channel Silicon MOSFET2SK2010Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2010] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :
2sk2010.pdf

isc N-Channel MOSFET Transistor 2SK2010DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
2sk2013.pdf

2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SJ313 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 VGate-source voltage VGSS
2sk2012.pdf

Ordering number:ENN4321BN-Channel Silicon MOSFET2SK2012Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2012] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO
Otros transistores... VTI630F , VTI634F , VTI640 , VTI640F , SSP2N60B , SSS2N60B , 2SK4100LS , 2SK1460 , IRFP450 , 2SK1033 , 2SK1035 , 2SK1036 , 2SK1052 , 2SK1053 , 2SK1066 , 2SK1067 , 2SK1068 .
History: BRI4N60 | FDBL0120N40 | 2SK4100LS | FDBL0090N40 | NTD4904N | BRI5N60 | G1825
History: BRI4N60 | FDBL0120N40 | 2SK4100LS | FDBL0090N40 | NTD4904N | BRI5N60 | G1825



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