2SK2010 Specs and Replacement
Type Designator: 2SK2010
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220ML
2SK2010 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2010 datasheet
2sk2010.pdf
Ordering number ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2010] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
2sk2010.pdf
isc N-Channel MOSFET Transistor 2SK2010 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
2sk2012.pdf
Ordering number ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2012] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
Detailed specifications: VTI630F, VTI634F, VTI640, VTI640F, SSP2N60B, SSS2N60B, 2SK4100LS, 2SK1460, AO4407, 2SK1033, 2SK1035, 2SK1036, 2SK1052, 2SK1053, 2SK1066, 2SK1067, 2SK1068
Keywords - 2SK2010 MOSFET specs
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History: SM6104PSF | 2SK1330 | BRCS3400MC | 2SK3829 | SM6012NSQG | NTJD5121NT1G | 2SK2654-01
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