2SK2032 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2032
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Encapsulados: TOP3
Búsqueda de reemplazo de 2SK2032 MOSFET
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2SK2032 datasheet
2sk2032.pdf
Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 90ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9
2sk2036.pdf
2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J
2sk2038.pdf
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2sk2035.pdf
2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M
Otros transistores... 2SK1425 , 2SK1426 , 2SK1427 , 2SJ628 , 2SK2011 , 2SK2014 , 2SK2015 , 2SK2016 , IRF9540 , 2SK2046 , 2SK2047 , 2SK2074 , 2SK2083 , 2SK2091 , 2SK2101-01MR , 2SK2108 , 2SJ616 .
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