2SK2101-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

N-channel MOS-FET2SK2101-01MRFAP-IIA Series 800V 2,1 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications Unit: mm VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating

Ordering number:ENN4602AN-Channel Silicon MOSFET2SK2108Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2108] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2109N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2109 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of4.5 0.1an IC operating at 5 V.1.5 0.11.6 0.2This product has a low ON resistance and superb switchingcharacteristics and is ide

TransistorsSmall switching (30V, 2A)2SK2103FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications98Transistors 2SK

SMD Type MOSFETN-Channel MOSFET2SK21091.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 1 (VGS = 4V)0.42 0.10.46 0.1Drain (D) RDS(ON) 0.8 (VGS = 10V)Gate (G)Internal diode1.GateGate protection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V

isc N-Channel MOSFET Transistor 2SK2108DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VD