All MOSFET. 2SK2101-01MR Datasheet

 

2SK2101-01MR MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2101-01MR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm

Package: TO220F15

2SK2101-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2101-01MR Datasheet (PDF)

3.1. 2sk2101 01mr.pdf Size:175K _fuji

2SK2101-01MR
2SK2101-01MR

N-channel MOS-FET 2SK2101-01MR FAP-IIA Series 800V 2,1? 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalen

4.1. 2sk2100-01mr.pdf Size:161K _update

2SK2101-01MR
2SK2101-01MR



4.2. 2sk210.pdf Size:361K _toshiba

2SK2101-01MR
2SK2101-01MR

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications Unit: mm VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

 4.3. 2sk2108.pdf Size:92K _sanyo

2SK2101-01MR
2SK2101-01MR

Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2108] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-22

4.4. 2sk2109.pdf Size:38K _nec

2SK2101-01MR
2SK2101-01MR

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V. 1.5 ± 0.1 1.6 ± 0.2 This product has a low ON resistance and superb switching characteristics and is ide

 4.5. 2sk2103 1-5.pdf Size:128K _rohm

2SK2101-01MR
2SK2101-01MR

4.6. 2sk2103.pdf Size:127K _rohm

2SK2101-01MR
2SK2101-01MR

Transistors Small switching (30V, 2A) 2SK2103 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 98 Transistors 2SK210

4.7. 2sk2109.pdf Size:672K _kexin

2SK2101-01MR
2SK2101-01MR

SMD Type MOSFET N-Channel MOSFET 2SK2109 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 0.5A ● RDS(ON) < 1Ω (VGS = 4V) 0.42 0.1 0.46 0.1 Drain (D) ● RDS(ON) < 0.8Ω (VGS = 10V) Gate (G) Internal diode 1.Gate Gate protection 2.Drain diode 3.Source Source (S) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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