2SK2123 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2123  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO220E

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SK2123 MOSFET

- Selecciónⓘ de transistores por parámetros

 

2SK2123 datasheet

 ..1. Size:34K  panasonic
2sk2123.pdf pdf_icon

2SK2123

Power F-MOS FETs 2SK2123 2SK2123 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 100mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 35ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

 8.1. Size:156K  sanyo
2sk212.pdf pdf_icon

2SK2123

Ordering number EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features Package Dimensions Ideal for FM tuners in low-voltage radios, car radios, unit mm etc. 2040A Small-sized package permitting 2SK212-applied sets [2SK212] to be made small and slim. 2.2 4.0 Small Crss (Crss=0.04pF typ). High yfs ( yfs =6.0mS typ). 0.4 0.5 0.4

 8.2. Size:33K  panasonic
2sk2128.pdf pdf_icon

2SK2123

Power F-MOS FETs 2SK2128 2SK2128 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS >15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 20V guaranteed 3.2 0.1 High-speed switching tf= 35ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive

 8.3. Size:33K  panasonic
2sk2126.pdf pdf_icon

2SK2123

Power F-MOS FETs 2SK2126 2SK2126 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 100mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 40ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

Otros transistores... 2SK1434, 2SK1435, 2SK1436, 2SK1437, 2SK1438, 2SK1439, 2SJ615, 2SK2122, 4435, 2SK2124, 2SK2125, 2SK2126, 2SK2127, 2SK2128, 2SK2129, 2SK2130, 2SK2145