2SK2130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2130
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO220E

Búsqueda de reemplazo de MOSFET 2SK2130

2SK2130 Datasheet (PDF)

..1. Size:31K panasonic
2sk2130.pdf

Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive

8.1. Size:419K 1
2sk2132.pdf

8.2. Size:447K 1
2sk2136.pdf

8.3. Size:435K 1
2sk2135.pdf

8.4. Size:124K 1
2sk2137.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis

8.5. Size:379K 1
2sk2131.pdf

8.6. Size:135K 1
2sk2138 2sk2138-z.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.

8.7. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. Size:54K nec
2sk2134.pdf

8.9. Size:111K nec
2sk2139.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis

8.10. Size:361K nec
2sk2133-z.pdf

8.11. Size:421K nec
2sk2134-z.pdf

8.12. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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