2SK2130 Todos los transistores

 ..1. Size:31K  panasonic
 2sk2130.pdf

Power F-MOS FETs 2SK2130 2SK2130 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 45ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive

 8.1. Size:419K  1
 2sk2132.pdf

 8.2. Size:447K  1
 2sk2136.pdf

 8.3. Size:435K  1
 2sk2135.pdf

 8.4. Size:124K  1
 2sk2137.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2137 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2137 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance 2SK2137 RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis

 8.5. Size:379K  1
 2sk2131.pdf

 8.6. Size:135K  1
 2sk2138 2sk2138-z.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect (in millimeters) Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 FEATURES 1.3 0.2 10.0 Low On-state Resistance RDS(on) = 2.4 MAX.

 8.7. Size:71K  renesas
 rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:54K  nec
 2sk2134.pdf

 8.9. Size:111K  nec
 2sk2139.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N-Channel Power MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis

 8.10. Size:361K  nec
 2sk2133-z.pdf

 8.11. Size:421K  nec
 2sk2134-z.pdf

 8.12. Size:33K  hitachi
 2sk213 2sk214 2sk215 2sk216.pdf

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D