2SK2130 Specs and Replacement
Type Designator: 2SK2130
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220E
2SK2130 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2130 datasheet
2sk2130.pdf
Power F-MOS FETs 2SK2130 2SK2130 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 45ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive... See More ⇒
Detailed specifications: 2SK2122, 2SK2123, 2SK2124, 2SK2125, 2SK2126, 2SK2127, 2SK2128, 2SK2129, BS170, 2SK2145, 2SK2151, 2SK2152, 2SK2154, 2SK2160, 2SK2167, 2SK2169, 2SK2170
Keywords - 2SK2130 MOSFET specs
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